The effect of Mo back contact ageing on Cu(In,Ga)Se2 thin-film solar cells
Identifieur interne : 000020 ( Main/Repository ); précédent : 000019; suivant : 000021The effect of Mo back contact ageing on Cu(In,Ga)Se2 thin-film solar cells
Auteurs : RBID : Pascal:14-0026982Descripteurs français
- Pascal (Inist)
- Vieillissement, Cellule couche mince, Cellule solaire, Revêtement, Inondation, Caractéristique électrique, Rendement quantique, Spectrométrie SIMS, Caractéristique capacité tension, Evaluation performance, Tension circuit ouvert, Courant court circuit, Facteur remplissage, Traitement thermique, Molybdène, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Matériau revêtu, Oxygène, Chalcopyrite, Cu(In,Ga)Se2.
- Wicri :
- concept : Inondation, Molybdène, Oxygène.
English descriptors
- KwdEn :
- Ageing, Chalcopyrite, Coated material, Coatings, Copper selenides, Electrical characteristic, Fill factor, Flood, Gallium selenides, Heat treatment, Indium selenides, Molybdenum, Open circuit voltage, Oxygen, Performance evaluation, Quantum yield, Quaternary compound, Secondary ion mass spectrometry, Short circuit currents, Solar cell, Thin film cell, Voltage capacity curve.
Abstract
In this work, we investigate the effect of ageing Mo-coated substrates in a dry and N2 flooded cabinet. The influence was studied by preparing Cu(In,Ga)Se2 solar cells and by comparing the electrical performance with devices where the Mo layer was not aged. The measurements used for this study were current-voltage (J-V), external quantum efficiency (EQE), secondary ion mass spectroscopy (SIMS) and capacitance-voltage (C-V). It was concluded that devices prepared with the aged Mo layer have, in average, an increase of 0.8% in efficiency compared with devices that had a fresh Mo layer. Devices with aged Mo exhibited a nominal increase of 12.5 mV of open circuit voltage, a decrease of 1.1 mA/cm-2 of short circuit current and a fill factor increase of 2.4%. Heat treatment of fresh Mo layers in oxygen atmosphere was also studied as an alternative to ageing and was shown to provide a similar effect to the aged device's performance.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The effect of Mo back contact ageing on Cu(In,Ga)Se<sub>2</sub> thin-film solar cells</title><author><name sortKey="Salome, Pedro M P" uniqKey="Salome P">Pedro M. P. Salome</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>751 21 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Fjallstrom, Viktor" uniqKey="Fjallstrom V">Viktor Fjallstrom</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>751 21 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Hultqvist, Adam" uniqKey="Hultqvist A">Adam Hultqvist</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>751 21 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Szaniawski, Piotr" uniqKey="Szaniawski P">Piotr Szaniawski</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>751 21 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Zimmermann, Uwe" uniqKey="Zimmermann U">Uwe Zimmermann</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>751 21 Uppsala</wicri:noRegion></affiliation></author><author><name sortKey="Edoff, Marika" uniqKey="Edoff M">Marika Edoff</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Suède</country><wicri:noRegion>751 21 Uppsala</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">14-0026982</idno><date when="2014">2014</date><idno type="stanalyst">PASCAL 14-0026982 INIST</idno><idno type="RBID">Pascal:14-0026982</idno><idno type="wicri:Area/Main/Corpus">000265</idno><idno type="wicri:Area/Main/Repository">000020</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt. : (Print)</title><title level="j" type="main">Progress in photovoltaics : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Ageing</term><term>Chalcopyrite</term><term>Coated material</term><term>Coatings</term><term>Copper selenides</term><term>Electrical characteristic</term><term>Fill factor</term><term>Flood</term><term>Gallium selenides</term><term>Heat treatment</term><term>Indium selenides</term><term>Molybdenum</term><term>Open circuit voltage</term><term>Oxygen</term><term>Performance evaluation</term><term>Quantum yield</term><term>Quaternary compound</term><term>Secondary ion mass spectrometry</term><term>Short circuit currents</term><term>Solar cell</term><term>Thin film cell</term><term>Voltage capacity curve</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Vieillissement</term><term>Cellule couche mince</term><term>Cellule solaire</term><term>Revêtement</term><term>Inondation</term><term>Caractéristique électrique</term><term>Rendement quantique</term><term>Spectrométrie SIMS</term><term>Caractéristique capacité tension</term><term>Evaluation performance</term><term>Tension circuit ouvert</term><term>Courant court circuit</term><term>Facteur remplissage</term><term>Traitement thermique</term><term>Molybdène</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé quaternaire</term><term>Matériau revêtu</term><term>Oxygène</term><term>Chalcopyrite</term><term>Cu(In,Ga)Se2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Inondation</term><term>Molybdène</term><term>Oxygène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this work, we investigate the effect of ageing Mo-coated substrates in a dry and N<sub>2</sub> flooded cabinet. The influence was studied by preparing Cu(In,Ga)Se<sub>2</sub> solar cells and by comparing the electrical performance with devices where the Mo layer was not aged. The measurements used for this study were current-voltage (J-V), external quantum efficiency (EQE), secondary ion mass spectroscopy (SIMS) and capacitance-voltage (C-V). It was concluded that devices prepared with the aged Mo layer have, in average, an increase of 0.8% in efficiency compared with devices that had a fresh Mo layer. Devices with aged Mo exhibited a nominal increase of 12.5 mV of open circuit voltage, a decrease of 1.1 mA/cm<sup>-2</sup> of short circuit current and a fill factor increase of 2.4%. Heat treatment of fresh Mo layers in oxygen atmosphere was also studied as an alternative to ageing and was shown to provide a similar effect to the aged device's performance.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt. : (Print)</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The effect of Mo back contact ageing on Cu(In,Ga)Se<sub>2</sub> thin-film solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>SALOME (Pedro M. P.)</s1></fA11><fA11 i1="02" i2="1"><s1>FJALLSTROM (Viktor)</s1></fA11><fA11 i1="03" i2="1"><s1>HULTQVIST (Adam)</s1></fA11><fA11 i1="04" i2="1"><s1>SZANIAWSKI (Piotr)</s1></fA11><fA11 i1="05" i2="1"><s1>ZIMMERMANN (Uwe)</s1></fA11><fA11 i1="06" i2="1"><s1>EDOFF (Marika)</s1></fA11><fA14 i1="01"><s1>Ångstrom Solar Center, Solid State Electronics, Uppsala University, Ångstrom Laboratory PO Box 534</s1><s2>751 21 Uppsala</s2><s3>SWE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>83-89</s1></fA20><fA21><s1>2014</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000500724620110</s5></fA43><fA44><s0>0000</s0><s1>© 2014 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>14-0026982</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Progress in photovoltaics : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>In this work, we investigate the effect of ageing Mo-coated substrates in a dry and N<sub>2</sub> flooded cabinet. The influence was studied by preparing Cu(In,Ga)Se<sub>2</sub> solar cells and by comparing the electrical performance with devices where the Mo layer was not aged. The measurements used for this study were current-voltage (J-V), external quantum efficiency (EQE), secondary ion mass spectroscopy (SIMS) and capacitance-voltage (C-V). It was concluded that devices prepared with the aged Mo layer have, in average, an increase of 0.8% in efficiency compared with devices that had a fresh Mo layer. Devices with aged Mo exhibited a nominal increase of 12.5 mV of open circuit voltage, a decrease of 1.1 mA/cm<sup>-2</sup> of short circuit current and a fill factor increase of 2.4%. Heat treatment of fresh Mo layers in oxygen atmosphere was also studied as an alternative to ageing and was shown to provide a similar effect to the aged device's performance.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Vieillissement</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Ageing</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Envejecimiento</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Cellule couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Thin film cell</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Célula capa delgada</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solar cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Célula solar</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Revêtement</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Coatings</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Revestimiento</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Inondation</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Flood</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Inundación</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Caractéristique électrique</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Electrical characteristic</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Característica eléctrica</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Rendement quantique</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Quantum yield</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Rendimiento quántico</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Spectrométrie SIMS</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Secondary ion mass spectrometry</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Espectrometría SIMS</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Caractéristique capacité tension</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Voltage capacity curve</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Característica capacidad tensión</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Tension circuit ouvert</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Open circuit voltage</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Courant court circuit</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Short circuit currents</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Facteur remplissage</s0><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Fill factor</s0><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Traitement thermique</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Heat treatment</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Tratamiento térmico</s0><s5>14</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Molybdène</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="15" i2="X" l="ENG"><s0>Molybdenum</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="15" i2="X" l="SPA"><s0>Molibdeno</s0><s2>NC</s2><s2>FX</s2><s5>22</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Séléniure de cuivre</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Séléniure de gallium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>25</s5></fC03><fC03 i1="19" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>26</s5></fC03><fC03 i1="19" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>26</s5></fC03><fC03 i1="20" i2="X" l="FRE"><s0>Matériau revêtu</s0><s5>27</s5></fC03><fC03 i1="20" i2="X" l="ENG"><s0>Coated material</s0><s5>27</s5></fC03><fC03 i1="20" i2="X" l="SPA"><s0>Material revestido</s0><s5>27</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Oxygène</s0><s2>NC</s2><s2>FX</s2><s5>28</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>Oxygen</s0><s2>NC</s2><s2>FX</s2><s5>28</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Oxígeno</s0><s2>NC</s2><s2>FX</s2><s5>28</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>29</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>29</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Calcopirita</s0><s5>29</s5></fC03><fC03 i1="23" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>027</s1></fN21><fN44 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